中文版
 

Prof. Tai Min: STT-MRAM and Interfacial Spintronics (2017/08/29)

( 2017-08-22 )

Title

STT-MRAM and Interfacial Spintronics

Speaker

 

Prof. Tai Min

School of Materials Science and Engineering                           

Xi'an Jiaotong University                                     

    

 

 

Time

3:00pm, August 29, 2017

Place

Room 9004 at the HFNL Building

Brief Bio of the Speaker

闵泰,现任西安交通大学材料与工程学院教授,第六批千人计划。1985年本科毕业于中国科学技术大学晶体物理专业;美国明尼苏达大学电机系博士,师从朱健刚教授(Jimmy Zhu)研究磁存储技术。多次成功研发出国际领先新型磁存储产品:世界第一款自旋阀磁记录头产品, IBM外业界第一款AMR磁记录头产品;2002年组建、领导TDK(Headway) MRAM研发团队,发明了按摩尔定律Scaling的磁场驱动MRAM,首次发现STT翻转过程中的backhopping及bifurcation过程,完成平面式STT-MRAM工艺可行性研究,该研究成果是TDK转让为台积电STT-MRAM产品的核心;2013年为欧洲微电子研究中心(IMEC)STT-MRAM/Spintronics项目总监,成功开发了CoNi基垂直式STT-MRAM,首次在IMEC300毫米中试线上完成存储器Array芯片工艺,研究成果转让给Globalfoundries。拥有72项美国专利,其中多项专利为公司核心专利,奠定了公司磁记录产品的基础。

Abstract

After more than 20 years’ development, spin-transfer-torque magnetic random access memory (STT-MRAM) has emerged as one of the most promising emerging main stream memory technology, due to its non-volatility, fast read and write time, small size, infinite endurance and compatibility with CMOS technology. There are still many remaining challenges for successful long-term commercialization as a disruptive memory technology. Its key element, the magnetic tunneling junction, has been reduced to 10nm in thickness and dominated by atomic layer engineered metal-oxide; 3d-5d-metal interfaces, in attempt to enhance tunneling magnetoresistance and to reduce the critical switching current while maintaining thermal stability. In this talk, we will review the recent progress of STT-MRAM and its underline interfacial magnetism with emphasis on our work on the interface effects on interlayer exchange coupling through ultrathin MgO, the electric field effect on ferromagnetic/antiferromagnetic coupling of synthetic antiferromagnetic layer and interfacial magnetic disorder modification of spin seebeck effect. Finally, the breakinglimitation of spin angular moment transfer (larger than ? transfer for single electron refection) at the interface of normal metal and magnetic insulator.


Seminar
 
[17-09-19]
[17-09-13]
[17-08-23]
[17-08-22]
Prof. Tai Min: STT-MRAM and Interfacial Spintronics (2017/08/29)
[17-08-07]
[17-08-07]
[17-07-04]
[17-06-20]
Links
 
CopyRight@International Center for Quantum Eesign of Functional Materials
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